Demonstration of Pulsed Electron Beam Applications (PEBA) for Fabricating Small Geometry Semiconductor Devices

摘要

This is the final report of a program demonstrating the applicability of pulsed electron beam processing to the fabrication of small-geometry silicon semiconductor devices, with the concomitant elimination of the high-temperature thermal treatments that can degrade performance. The report documents the use of pulsed annealing techniques to fabricate diodes, ion-implanted resistors, and transistors with electrical characteristics comparable to devices fabricated by high temperature thermal processing. Pulsed liquid phase epitaxial regrowth of polysilicon films were demonstrated. Resolution with oxide masks to one micron has been shown to be feasible. (Author)