首页> 外文期刊>Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers >Applications of Wide-Band-Gap Materials for Optoelectronic Functional Devices Fabricated by a Pair of Interfering Femtosecond Laser Pulses
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Applications of Wide-Band-Gap Materials for Optoelectronic Functional Devices Fabricated by a Pair of Interfering Femtosecond Laser Pulses

机译:飞秒激光脉冲对在光电功能器件中宽带隙材料的应用

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摘要

A pair of interfering near-IR femtosecond pulses from a mode-locked Ti: sapphire laser with a regenerative amplifier have been applied to wide-band-gap materials such a lithium fluoride (LiF) to create laser-active F_2 and F_3~+ color centers and to encode nonerasable periodic gratings with fine fringe spacings of submicrometer size simultaneously. Using such a photon-written microstructure, a distributed-feedback LiF laser oscillation based on F_2 color centers has been realized at room temperature. A lasing output performance with a linewidth of less than 1 nm, slope efficiency of ~10%, and beam divergence of ~20mrad was obtained at 710nm.
机译:来自锁模Ti:蓝宝石激光器和再生放大器的一对干扰近红外飞秒脉冲已应用于宽带隙材料(如氟化锂(LiF)),以产生激光激活的F_2和F_3〜+颜色中心并编码具有亚微米尺寸的细条纹间隔的不可擦周期光栅。使用这种光子写入的微结构,已经在室温下实现了基于F_2色心的分布式反馈LiF激光振荡。在710nm处获得的激光输出性能为:线宽小于1 nm,斜率效率约为10%,光束发散度约为20 mrad。

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