首页> 美国政府科技报告 >Electrical Characterization of Single Chip Microprocessors and LSI Devices

【24h】

Electrical Characterization of Single Chip Microprocessors and LSI Devices

机译：单片微处理器和LsI器件的电特性

获取原文

页面导航

摘要
著录项
引文网络
相似文献
相关主题

摘要

The objective of this effort was to develop functional and parametric tests for selected microprocessors and to develop MIL-M-38510 slash sheets for them. A test pattern and program were developed for the 8086 and data was taken and analyzed to determine its operating region. The procedure for LSI functional development, which was used on this and previous RADC contracts, was updated. The applicability of a dedicated benchtop tester to MIL-M-38510 testing was reviewed.

著录项

作者
Hajduk, B. W.; Ostrowski, T. M.; Tucker, D.; Luzzi, J.; Peronto, M.;
展开▼
作者单位

展开▼
年度 1981
页码 p.1-139
总页数 139
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Microprocessors; Specifications; Computer architecture; Microcircuits; Military requirements; Complementary metal oxide semiconductors; Integrated circuits; Logic circuits; Shift registers; Digital systems; Computer programs; Data rate; Clocks; Chips(Electronics);

机译：微处理器;规格;计算机结构;微电路;军事要求;互补金属氧化物半导体;集成电路;逻辑电路;移位寄存器;数字系统;计算机程序;数据速率;时钟;芯片（电子）;

相似文献

外文文献
中文文献
专利

1. Analysis and Characterization of Device Variations in an LSI Chip Using an Integrated Device Matrix Array [J] . Shin-ichi Ohkawa Masakazu Aoki, Hiroo Masuda IEEE Transactions on Semiconductor Manufacturing . 2004,第2期

机译：使用集成器件矩阵阵列对LSI芯片中的器件变化进行分析和表征
2. Analysis and characterization of device variations in an LSI chip using an integrated device matrix array [J] . Ohkawa S., Aoki M., Masuda H. IEEE Transactions on Semiconductor Manufacturing . 2004,第2期

机译：使用集成器件矩阵阵列对LSI芯片中的器件变化进行分析和表征
3. Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction [J] . Pierre Blanc, Martin Heiss, Carlo Colombo, International Journal of Nanotechnology . 2013,第5a7期

机译：单个纳米线的电触点：一种可扩展的方法，允许在芯片上使用多个设备。应用于单个纳米线径向p-i-n结
4. Analysis and characterization of device variations in an LSI chip using an integrated device matrix array [C] . Ohkawa, S., Aoki, . 2003

机译：使用集成器件矩阵阵列对LSI芯片中的器件变化进行分析和表征
5. Devices and systems-on-chip for photonic communication links in a microprocessor. [D] . Wade, Mark T. 2015

机译：微处理器中用于光子通信链接的设备和片上系统。
6. Electrical Design and Evaluation of Asynchronous Serial Bus Communication Network of 48 Sensor Platform LSIs with Single-Ended I/O for Integrated MEMS-LSI Sensors [O] . Chenzhong Shao, Shuji Tanaka, Takahiro Nakayama, 2018

机译：集成MEMS-LSI传感器的48个单端I / O传感器平台LSI的异步串行总线通信网络的电气设计和评估
7. Electrical contacts to single nanowires: a scalable method allowing multiple devices on a chip. Application to a single nanowire radial p-i-n junction [O] . Pierre Blanc, Martin Heiss, Carlo Colombo, 2013

机译：单个纳米线的电触点：可伸缩方法，允许芯片上的多个设备。应用于单个纳米线径向P-I-N结

Electrical Characterization of Single Chip Microprocessors and LSI Devices

摘要

著录项

引文网络

相似文献

相关主题

期刊订阅