Electron Distribution Function and Mobility in III-V Compounds for High and Low Fields

摘要

Electron distributions are calculated for low and high electric fields in III-V semiconductors with polar optical scattering. Approximate analytic expressions are derived by two analytic methods and compared to results found by a perturbation method and iteration method for low electric fields. Electron mobility is calculated. For high electric fields an expansion inversely in the electric field gives an approximate electron distribution function valid at low energies. A non-parabolic energy bond and p-wave scattering (they and interdependent) do not affect the asymmetrical part of the distribution function within the central valley; hence, they do not cause the negative differential resistance.