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High-electron-mobility transistor (HEMT) capable of protecting a III-V compound layer
High-electron-mobility transistor (HEMT) capable of protecting a III-V compound layer
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机译:能够保护III-V化合物层的高电子迁移率晶体管(HEMT)
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摘要
A semiconductor structure comprises a semiconductive substrate comprising a top surface, a III-V compound layer over the semiconductive substrate, and a first passivation layer over the III-V compound layer. The semiconductor structure also includes an etch stop layer over the first passivation layer. The semiconductor structure further includes a gate stack over the first passivation layer and surrounded by the etch stop layer.
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