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High-electron-mobility transistor (HEMT) structure capable of protecting a III-V compound layer and manufacturing method thereof
High-electron-mobility transistor (HEMT) structure capable of protecting a III-V compound layer and manufacturing method thereof
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机译:可保护III-V族化合物层的高电子迁移率晶体管结构及其制造方法
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摘要
A semiconductor structure includes a semiconductive substrate having a top surface, a III-V compound layer covering the top surface, and a passivation layer having a lower portion and an upper portion, both comprising at least one of oxide and nitride over the III-V compound layer. The semiconductor structure also includes an etch stop layer between the lower portion and the upper portion of the passivation layer, and a gate stack penetrating through the etch stop layer and landing on the lower portion of the passivation layer. The gate stack is surrounded by the etch stop layer.
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