Application of a Resistance Heater to the MOCVD (Metal-Organic Chemical Vapor Deposition) Growth of Undoped and Se-Doped GaAS

摘要

Described is the quartz-envelope (quartz glass outer jacket) heater, a new type of resistance heater for metal-organic chemical vapor deposition (MOCVD) systems capable of heating substrates to between 600 and 800 C. Results of expitaxial growth and electrical characterization of undoped and Se-doped GaAs from trimethylgallium and arsine are presented. Heate design and application to MOCVD growth and GaAs are detailed. The GaAs epitaxial layers were electrically characterized by Hall effect and Miller profiler measurements. Mobility-versus-free-carrier-concentration curves for Se-doped GaAs prepared with the quartz-envelope heater and doped GaAs grown by various MOCVD, vapor-phase epitaxy, and liquid-phase epitaxy techniques indicate the comparable or superior mobilities of material grown with the quartz-envelope heater.