Modeling of Substrate and Implantation Effects on the Threshold Voltage of MESFET Structures Fabricated in Semi-Insulating GaAs

摘要

The primary objective of this process modeling program was to identify Semi-Insulating Gallium Arsenide (SI-GaAs) substrate and implantation parameters that affect device behavior. Three major areas were investigated. 1. Predicting the two-dimensional distribution of the EL2 anti-site defect, 2. Modeling changes in the two-dimensional 2/EL2 distribution resulting from the annealing of Si-GaAs, and 3. Determining the electrical characteristics of SI-GaAs substrate and the thermal stability of these characteristics. A two-dimensional computer model was developed to predict the thermally induced stress in a growing Czochralski GaAs boule from fundamental growth parameters. A stress-conversion coefficient was obtained from experimental data and was applied to the stress results to predict two-dimensional EL2 profiles. These predicted profiles were compared with experimental results.