Interfacial Properties of Germanium Nitride Dielectric Layers in Germanium

摘要

The first year's effort on this project has been primarily devoted to the design and construction of a low-pressure chemical vapor deposition system for growth of the germanium nitride layers. The gas manifold layout is shown schematically in Fig. 1, the reactor assembly is shown in Fig. 2, and the vacuum pumping assembly is shown in Fig. 3. The generator-cavity system is capable of delivering 0-600 W of microwave power at 2.45 GHz. The power generating section has been constructed from components contained in a portable home microwave oven and the cavity was assembled from easily machinable pieces. The cw magnetron source was mounted directly on a cylindrical microwave cavity. The plasma was contained in an on-axis 20-mm o.d. quartz tube. Design tradeoffs and operating information are discussed.