METHOD FOR FORMING A GERMANIUM OXIDE FILM CAPABLE OF IMPROVING A HIGH-K FILM AND AN INTERFACIAL PROPERTY OF A GERMANIUM BOARD AND A MATERIAL FOR AN ELECTRONIC DEVICE

摘要

PURPOSE: A method for forming a germanium oxide film and a material for an electronic device are provided to control unstable separation of the germanium oxide film by forming the germanium oxide film on a germanium board in which a High-k film is formed.;CONSTITUTION: A processing container(11) receives a board supporter(12). A board supporter maintains a germanium oxide film substrate(W). A slot plate(14) is located on a dielectric microwave transmissive plate(13). A plurality of long holes(14a) is formed on the slot plate. A gas source(24) is connected to a gas nozzle(22) passing through a gas pipe line(23).;COPYRIGHT KIPO 2013;[Reference numerals] (17) Microwave supply device; (24) Gas supply source