首页> 外文会议>2010 20th International Crimean Conference Microwave and Telecommunication Technology >Peculiarities of germanium driving back from germanium-silicate glass formed in the process of oxidation of the germanium-doped polycrystalline silikon films
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Peculiarities of germanium driving back from germanium-silicate glass formed in the process of oxidation of the germanium-doped polycrystalline silikon films

机译:从掺杂锗的多晶硅薄膜的氧化过程中形成的硅酸锗玻璃驱赶回锗的特殊性

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摘要

It is determined that the content of Ge in the volume of germanium-silicate glass (GSG) influences density of nanocrystalline grains. It is ascertained that germanium atoms are unevenly distributing between separate nanoclusters as well as in the limits of one cluster. The size and density of germanium nanoclusters may be independently checked by the way of changing of germanium content in the composition of GSG, by the medium, temperature and by the heat treatment.
机译:可以确定锗硅玻璃(GSG)的体积中Ge的含量会影响纳米晶粒的密度。可以确定的是,锗原子在不同的纳米团簇之间以及在一个团簇的范围内分布不均匀。锗纳米团簇的大小和密度可以通过改变GSG组成中锗含量的方式,介质,温度和热处理来独立检查。

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