Atomic layer deposition of insulating nitride interfacial layers for germanium metal oxide semiconductor field effect transistors with high-κ oxide/tungsten nitride gate stacks

摘要

Atomic layer deposition (ALD) was used to deposit passivating interfacial nitride layers between Ge and high-κ oxides. High-κ oxides on Ge surfaces passivated by ultrathin (1-2 nm) ALD Hf_3N_4 or AlN layers exhibited well-behaved C-V characteristics with an equivalent oxide thickness as low as 0.8 nm, no significant flatband voltage shifts, and midgap density of interface states values of 2X 10~(12) cm~(-1) eV~(-1). Functional n-channel and p-channel Ge field effect transistors with nitride interlay er/high-κ oxide/metal gate stacks are demonstrated.