A method for stabilizing the threshold voltage of silicon - gate - field effect transistors with from oxide / nitride - insulating layers composite gate - dielectrics

摘要

Large threshold voltage shifts of silicon gate FET devices having a composite nitride-oxide gate dielectric are greatly reduced by subjecting the nitride to a dry oxygen annealing at temperatures between 970 DEG -1,150 DEG C prior to depositing the silicon gate electrode. Annealing at 1,050 DEG C applied for a duration of one-half to one hour produces excellent results.