This paper considers the application of plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) films as gate dielectric for organic thinfilm transistors (OTFTs), with solution-processed poly[5,5′-bis(3-dodecyl-2-thienyl)-2,2′- bithiophene)] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying stoichiometry deposited at 300°C as well as 150°C for plastic compatibility. Transistors show improvement in field-effect mobility (Μfe ≅ 0.030 ~cm2/V-s) and on/off current rati I_ON/I_OFF ≤ 10~8) as the silicon content in SiNx increases. With PECVD SiOx gate dielectric, preliminary devices exhibit a Μfe of 0.4 cm~2/V-s and I_ON/I_OFF of 10~8. The results demonstrate the viability of PECVD SiNx and SiOx gate dielectrics for OTFT circuit integration on rigid and flexible substrates.
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