Atomic-layer-deposited silicon-nitride/SiO{sub}2 stacked gate dielectrics for highly reliable p-metal-oxide-semiconductor field-effect transistors

摘要

An extremely thin (≤O.4nm) silicon-niteride layer has been deposited on thermally grown SiO2 by an atomic-layer-deposition (ALD) technique The boron penetration through the stacked gate dielectrics has dramatically been suppressed, and the reliability has been significantly improved,as confirmed by capacitance-gate voltage, gate current-gate voltage, and time-dependent dielectric-breakdown characteristics. The ALD technique allows us to fabricate an extremely thin, very uniform siliconniteride layer with atomic-scale control.