64-Bit 800-MHz Insulated-Gate CCD (Charge-Coupled-Device) on InP

摘要

Sixty-four-bit 259-gate insulated gate buried-channel charge-coupled devices (CCD's) have been fabricated on semi-insulating InP using a planar ion implantation process. These 5-um gate-length structures, exercised with sinusoidal clocks, have operated to a measurement-limited upper frequency of 800 MHz and exhibited average effective stored charge per unit area in their channels as high as 6 X 10 to the 12th power electrons per sq cm. Input-to-output delay-time measurements as a function of frequency clearly indicate proper CCD operation.