DC and Microwave Characteristics of an In(0.53)Ga(0.47)As/In(0.52)Al(0.48)As Modulation-Doped Quasi-MISFET

摘要

The DC and microwave performance of a modulation-doped InGaAs/InAlAs quasi-MISFET structure, grown by molecular beam epitaxy, is reported. Improved performance is obtained with the incorporation of Ti in the source-drain metallisation with which contact resistances as low as 0.1 mm are measured. An extrinsic transconductance of 310 mS/mm and a best value of fT = 32 GHz in a 1.0 micro m -gate device are measured at 300 K.