Formation of MOS (Metal Oxide Semiconductor) Gates by Rapid Thermal/Microwave Remote Plasma Multiprocessing

摘要

A novel cold wall single wafer lamp heated Rapid Thermal/Microwave Remote Plasma Multiprocessing (RTMRPM) reactor has been developed for multilayer in-situ growth and deposition of dielectrics, silicon, and metals. This equipment is the result of an attempt to enhance semiconductor processing equipment versatility, to improve process reproducibility and uniformity, to increase growth and deposition rates at reduced processing temperatures, and to achieve in situ multiprocessing in conjunction with real time process monitoring and automation. For high performance MOS VLSI applications, a variety of selective and nonselective tungsten deposition processes were investigated in this work. The tungsten gate MOS devices fabricated using the remote plasma multiprocessing techniques exhibited negligible plasma damage and near ideal electrical characteristics. The flexibility of the reactor allows optimization of each process step yet allows multiprocessing.