GaAs Circuit Restructuring by Multi-Level Laser-Direct-Written Tungsten Process

摘要

Laser-direct-writing processes are employed to fabricate a GaAs digital integrated circuit. The lithography-free techniques deposit and etch conductors and resistors, and remove insulating layers, thus enabling multilevel interconnections. These combined direct-write processes provide the flexibility of clip-lead prototyping on a micrometer scale. (Gallium Arsenides)