GaAs Monolithic Microwave Integrated Circuit Trimming Using Laser-Direct-Written Tungsten Microstrip Lines

摘要

Laser-direct-write deposition of tungsten has been investigated as a technique for postfabrication trimming of Gallium Arsenide monolithic microwave integrated circuits. Tungsten microstrip lines of 30 microohms/cm resistivity are deposited via a vapour-phase reaction induced by a focused argon-ion laser beam. Lines of 1.8 micrometer thickness