Properties of Reactively Sputtered Mo(1-x)Ox Films

摘要

Electrically conducting RuO2 and Mo1-xOx films have recently emerged as potential candidates for diffusion barrier applications in VLSI contact metallurgy. These barrier layers can typically inhibit interdiffusion between Al and Si substrate up to 600 C annealing for 30 mins. It is well known that the diffusion barrier properties of a reactively sputtered compound layer (such as TiN) can depend critically on sputtering conditions. In view of that, the present work aims at proving a concise account and basic understanding of the deposition behavior of Mo1-xOx films. Mo1-xOx can be formed easily by reactively sputtering a Mo target in a a O2/Ar gas mixture. The influence of various sputtering process parameters, such as power, initial total gas pressure, and partial pressure of oxygen on the composition, deposition rate, resistivity and intrinsic stress of Mo1-xOx films have been examined. Reprints. (JES)