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Systems and methods to maintain optimum stoichiometry for reactively sputtered films
Systems and methods to maintain optimum stoichiometry for reactively sputtered films
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机译:维持反应溅射膜最佳化学计量的系统和方法
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摘要
The present invention relates to systems and methods for preparing reactively sputtered films. The films are generally thin transition metal oxide (TMO) films having an optimum stoichiometry for any useful device (e.g., a sub-stoichiometric thin film for a memristor device). Described herein are systems, methods, and calibrations processes that employ rapid control of partial pressures to obtain the desired film.
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