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机译:Ta含量对反应溅射Ta_xZr_(1-x)N薄膜微结构和电性能的影响
Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, Republic of China;
Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, Republic of China;
Department of Mechanical Engineering, National Chin-Yi University of Technology, Taiping City, Taichung County 411, Taiwan, Republic of China;
Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan, Republic of China;
Department of Electrical Engineering, Cheng Shiu University, Kaohsiung 833, Taiwan, Republic of China;
ta_xzr_(1-x)n films; reactive sputtering; resistivity; hall-effect;
机译:反应溅射沉积氧化物薄膜:溅射功率和衬底温度对微观结构,形态和电性能的影响
机译:直流反应磁控溅射(Ta2O5)(1-x)(TiO2)(x)薄膜的结构,光电性能
机译:YSZ薄膜在不同压力下反应溅射沉积的微观结构与电学性质的关系
机译:脉冲频率对脉冲直流反应溅射氧化钒薄膜的微观结构,组成和光学性能的影响
机译:镧镍氧化物电极上MOCVD衍生的钙钛矿铅锆(x)钛(1-x)氧(3)和铅(scan钽)(1-x)钛(x)氧(3)薄膜的微观结构和电性能缓冲硅
机译:低温处理的Sn掺杂In2O3薄膜的电性能:微观结构和氧含量的作用以及缺陷调制掺杂的潜力
机译:通过反应磁控溅射获得的工作气体在工作气体中的影响,通过反应磁控溅射获得的薄膜Zn 1-x×O.