Dual-Susceptor OMCVD (Organometallic Chemical Vapor Deposition) for Production of Heterostructure Materials

摘要

A new generation of electronic and photonic devices requires advanced heterostructures. The large-scale production of high electron mobility transistors and quantum-well optoelectronic devices requires the deposition of atomically abrupt layers of gallium arsenide and related III-V materials uniformly over large areas. This Phase SBIR project addresses the application of organometallic chemical vapor deposition (OMCVD) to this purpose. In brief, the innovation described here comprises dual rotating vertical surfaces onto which GaAs substrate wafers are mounted. These surfaces (susceptors) are heated to the crystal growth temperature, so that when the chemical vapor that contains the Ga and As passes between the rotating susceptors, a thin film with an atomically abrupt interface is deposited. (JES)