首页> 外国专利> RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION, PRODUCTION METHOD THEREOF, AND PRODUCTION METHOD OF OXIDE FILM CONTAINING INDIUM FORMED BY USING RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION

RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION, PRODUCTION METHOD THEREOF, AND PRODUCTION METHOD OF OXIDE FILM CONTAINING INDIUM FORMED BY USING RAW MATERIAL FOR CHEMICAL VAPOR DEPOSITION

机译:用于化学气相沉积的原材料,其生产方法以及使用用于化学气相沉积的原材料制成的含氧化膜的铟的生产方法

摘要

PROBLEM TO BE SOLVED: To provide a raw material for chemical vapor deposition (CVD), preservable for a long term, and easily handleable when performing CVD, which is a raw material for producing an indium oxide thin film by CVD; and to provide a production method thereof.;SOLUTION: A raw material for chemical vapor deposition contains a compound expressed as following formula (1), and has an absorption peak in a region of 500 nm or higher and 700 nm or lower in a visible light region (in the formula (1), R shows an alkyl group having the number of carbon atoms of 1-4).;SELECTED DRAWING: None;COPYRIGHT: (C)2018,JPO&INPIT
机译:解决的问题:提供一种化学气相沉积(CVD)的原材料,该原材料可长期保存并且在进行CVD时易于处理,该原材料是通过CVD生产氧化铟薄膜的原材料。解决方案:用于化学气相沉积的原料包含下式(1)表示的化合物,并且在可见光中具有在500nm以上且700nm以下的区域中的吸收峰。轻区域(在式(1)中,R表示碳原子数为1-4的烷基)。;选择制图:无;版权:(C)2018,JPO&INPIT

著录项

  • 公开/公告号JP2018090855A

    专利类型

  • 公开/公告日2018-06-14

    原文格式PDF

  • 申请/专利权人 KOJUNDO CHEM LAB CO LTD;

    申请/专利号JP20160234819

  • 发明设计人 MIZUTANI BUNICHI;

    申请日2016-12-02

  • 分类号C23C16/18;C23C16/40;C30B29/16;H01B13/00;

  • 国家 JP

  • 入库时间 2022-08-21 13:13:49

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