Wigner Function Modeling of Resonant Tunneling Diodes with High Peak-to-Valley Ratios

摘要

Wigner function simulations of structures with experimentally observed high peak-to-valley ratios are carried out. It is shown that if care is taken with the numerical method used, the simulations reproduce these sharp resonances. When scattering is ignored, peak-to-valley ratios of 33.7 are obtained for a pseudomorphic InGaAs-AlAs structure. The effects of phonon scattering are included to first order. Also, a small signal analysis is carried out and the results are used to predict the rf power generation capability of these devices. Reprints. (rh)