Monte Carlo Approach to Transient Analysis of HBT's (Heterojunctions bipolar transistors) with Different Collector Designs

摘要

The transient analysis of heterojunction bipolar transistors (HBT's) using the Monte Carlo technique is presented for the first time. Three HBT structures with conventional (A), inverted field (B), and undoped collector (C) were simulated. The transient behavior of the collector currents shows that the time constants tau are 1.466, 0.722, and 0.863 ps at a collector current of 35,000 A/sq cm for devices A, B and C, respectively. This suggests that the inverted field structure may be the best choice for high-speed applications. Reprints. (JHD)