首页>
外国专利>
HETEROJUNCTION BIPOLAR TRANSISTOR WITH REDUCED SUB-COLLECTOR LENGTH, METHOD OF MANUFACTURE AND DESIGN STRUCTURE
HETEROJUNCTION BIPOLAR TRANSISTOR WITH REDUCED SUB-COLLECTOR LENGTH, METHOD OF MANUFACTURE AND DESIGN STRUCTURE
展开▼
机译:子集尘器长度减小的异质结双极晶体管,制造方法和设计结构
展开▼
页面导航
摘要
著录项
相似文献
摘要
A heterojunction bipolar transistor (HBT) structure, method of manufacturing the same and design structure thereof are provided. The HBT structure includes a semiconductor substrate having a sub-collector region therein. The HBT structure further includes a collector region overlying a portion of the sub-collector region. The HBT structure further includes an intrinsic base layer overlying at least a portion of the collector region. The HBT structure further includes an extrinsic base layer adjacent to and electrically connected to the intrinsic base layer. The HBT structure further includes an isolation region extending vertically between the extrinsic base layer and the sub-collector region. The HBT structure further includes an emitter overlying a portion of the intrinsic base layer. The HBT structure further includes a collector contact electrically connected to the sub-collector region. The collector contact advantageously extends through at least a portion of the extrinsic base layer.
展开▼