Growth of Epitaxial GaAs and GaAlAs on Silicon Substrates by OMVPE (Organometallic Vapor Phase Epitaxy).

摘要

This report covers the period December 1988 to February 1989. The planned work for Quarter 10 was as follows: Continue growth and assessment of Gallium Arsenide/Silicon FET structures; Continue development of low temperature (approx. 900 C) silicon substrate cleaning techniques; Carry out further growth on profiled silicon substrates; Defect reducing experiments using cyclic thermal anneal routines during growth; Study the effect of substrate orientation, on nucleation and initial stages of growth; TEM studies and assessment of defect reducing experiments, nucleation, and initial stages of growth; and Design and fabrication of low complexity structures containing more than one device function. Keywords: Annealing; Crystallographic slip; Field effect transistors; Aluminum gallium arsenides; Organometallic vapor phase epitaxy. (aw)