Growth of Epitaxial GaAs and GaAlAs on Silicon Substrates by OMVPE.

摘要

This report covers the reporting period September to November 1988, quarter 9 in the program. Further heteroepitaxial and homo-epitaxial FET structures have been grown and assessed. CV profiles and mesa isolation tests have revealed difficulties in obtaining GaAs buffer layers with sufficiently high resistance to provide adequate mesa isolation to enable FETs to be processed to completion. A Further series of silicon substrates have been submitted for processing to give linear features orientated in the 110, 010 and 100, directions. (rrh)