Growth and properties of Hg1-xCdxTe on GaAs substrates by organometallic vapor‐phase epitaxy

摘要

Growth of epitaxial mercury cadmium telluride (Hg1-xCdxTe) on (100) GaAs substrates by organometallic vapor‐phase epitaxy is described. Transport measurements made on these layers at 80 K indicate an electron mobility greater than 2×105 cm2/ V s for layers of composition x≂0.2. An intervening CdTe buffer layer was used to accommodate the large (14%) lattice mismatch between these systems, and HgCdTe layers have been grown with CdTe buffer layer thicknesses from 1000 Å to 3 μm. It is shown that a CdTe buffer layer of 2–3 μm is necessary to accommodate the misfit dislocations at the CdTe‐GaAs interface.