Comparative Study of Three Commercial Indium Phosphide Substrates.

摘要

A comparative study of the three commercial indium phosphide substrates, CrystaComm, ICI Americas and Sumitomo Electric, was performed using chemical etching techniques. The average dislocation densities were found to be equal to or slightly greater than the values reported by the manufacturers. All three substrates exhibited speckles and unspecified defects with bromine-methanol etching. The unspecified defect densities were similar for all substrates. Small amounts of subsurface was observed on all wafers. The study showed that the three commercial substrates were of comparable defect density. Results of the study indicate that additional research is necessary in order to improve the technology for preparing InP substrates. Keywords: InP Substrates; InP Wafers; III-IV Semiconductors.