Modeling the Gate I/V Characteristic of a GaAs MESFET for Volterra-Series Analysis.

摘要

This report shows that the Taylor-series coefficients of a FET's gate/drain I/V characteristic, which are used to model the I/V nonlinearity for Volterra-series analysis, can be derived from low-frequency rf measurements of harmonic output levels. The method circumvents many of the problems that occur when dc measurements are used to characterize this nonlinearity. (rrh)