Detectors; Electrical properties; Electronic equipment; Electronics; Electrooptics; Gallium arsenides; Gases; Group iii compounds; Group v compounds; Integration; Lasers; Materials; Modulators; Optical equipment; Optical processing; Optical properties; Semiconductors; Solids; Sources; Substrates; Threshold effects; Optoelectronic devices; Molecular beam epitaxy; Gallium indium arsenides; Indium phosphides;
机译:通过固体源分子束外延在AlGaAs / GaAs波导膜上的InGaAs / InP引脚光电二极管阵列
机译:晶格匹配和应变的InGaAs-AlGaAs(在GaAs上)和InGaAs-AlInAs(在InP上)量子阱激光器的稳态和瞬态特性比较
机译:通过弛豫渐变的Ge_xSi_(1-x)缓冲层在Si基板上制造的改进的室温连续波GaAs / AlGaAs和InGaAs / GaAs / AlGaAs激光器
机译:InGaAsP / InP,AlGaAs / GaAs和AlInGaAs / InP激光器阈值温度灵敏度的详细比较
机译:基于N沟道InGaAsP-InP的倒置通道技术器件(ICT)的设计,制造和表征,用于光电集成电路(OEIC):双异质结光电开关(DOES),异质结场效应晶体管(HFET),双极倒置沟道场-效应晶体管(BICFET)和双极型反向沟道光电晶体管(BICPT)。
机译:在InP(100)衬底上生长的GaSb / InGaAs II型量子点的结构和光学性质
机译:AlGaAs-GaAs和InGaAsP-InP半导体激光器的高性能研究