A detailed comparison of the temperature sensitivity of threshold of InGaAsP/InP, AlGaAs/GaAs, and AlInGaAs/InP lasers

摘要

Summary form only given. The high temperature performance of semiconductor laser diodes is very important for data-communication applications where the use of expensive, and sometimes unreliable, temperature control systems such as thermoelectric coolers, is undesirable. Many investigations have been conducted to measure and understand the superlinear increase in threshold current as temperature is increased. The measurements made with pulsed L-I produce the same results, and a theoretical investigation into the possible processes for the superlinear relation will be described. These include Auger recombination, intervalence band absorption, carrier leakage, or changes in optical gain.We have shown a new, more robust, measure of the threshold current sensitivity in laser diodes.