Properties and Device Applications of Deep Quantum Well Resonant Tunneling Structures.

摘要

A self-consistent quantum mechanical simulation is used to study the effects of doping, spacer layers, barrier height, barrier width and well doping on the bound state and bound state charge in a deep quantum well resonant tunneling structure. Experimental results for the GaAs and InP heterostructure material system are present. Finally various device applications such as microwave video detectors, charge transfer devices, and three terminal devices are proposed. Keywords: Reprints. (rrh)