Complementary metal oxide semiconductors; Random access computer storage; Breakdown(Electronic threshold); Circuits; Degradation; Dosage; Experimental data; Immunity; Irradiation; Mobility; Radiation damage; Radiation tolerance; Sensitivity; Simulation; Simulators; Space environments; Space technology; Statics; Test and evaluation; Transistors; Two dimensional; Voltage; SEU(Single Event Upsets); Upset(Electronics); SRAM(Static Random Access Memories); SEU Tests;
机译:辐照的16 K CMOS SRAM中的单事件失败
机译:商业批量65nm CMOS SRAM和触发器中的单事件翻转和多单元翻转建模
机译:CMOS SRAM中单事件闩锁和单事件翻转的微束映射
机译:CMOS SRAM中单事件闩锁和单事件翻转的微束映射
机译:批量CMOS中未硬化和硬化触发器的单事件翻转技术缩放趋势
机译:缓解癫痫神经刺激器的位翻转或单事件不适
机译:通过突发产生速率函数评估CMOS芯片敏感性参数对中子影响的单个事件扰乱