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Single Event Upset in Irradiated 16K CMOS SRAMs.

机译:辐照16K CmOs sRam中的单事件干扰。

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The single-event upset (SEU) characteristics of a CMOS SRAM cell irradiated under conditions that simulate the total dose degradation anticipated in space applications are experimentally and theoretically investigated. Simulations of SEU sensitivity using a two-dimensional circuit/device simulator, with measured transistor threshold-voltage shifts and mobility degradations as inputs, are shown to be in good agreement with experimental data at high total dose. Both simulation and experiment show a strong SRAM-cell SEU 'imbalance,' resulting in a more SEU-tolerant 'preferred' state and a less-tolerant 'nonpreferred' state. The resulting cell imbalance causes an overall degradation in SEU immunity, which increases with increasing total dose and which should be taken into account in SEU testing and part characterization. Keywords: Single event upset tests; Space environments; Radiation damage; Static random access memories; Complementary metal oxide semiconductors. (edc)

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