Single Event Upset and Multiple Cell Upset Modeling in Commercial Bulk 65-nm CMOS SRAMs and Flip-Flops

摘要

A proprietary Monte-Carlo simulation code dedicated to heavy ion cross-section prediction has been developed. The code is based on diffusion-collection equations, takes into account recombination processes, uses an improved drain strike model, and includes new upset analysis algorithms for different circuit architectures. Simulated cross-sections are compared to heavy ion experimental characterizations for commercial bulk 65-nm single- and dual-port SRAMs. Simulation capabilities of much more complex circuits are demonstrated considering a 65-nm radiation-hardened-by-design (RHBD) Flip-Flop (FF).