Ga(0.51)In(0.49)P/GaAs HEMT's Exhibiting Good Electrical Performance at CryogenicTemperatures

摘要

The dc and microwave characteristics of Ga(0.51)In(0.49)P/GaAs HEMT' s grown byMOCVD are presented. Devices with 1 micron long gates shown transconductance of 163 and 213 mS/mm at 300 and 77K, respectively. Their maximum cutoff frequency is 17.8 GHz. Deep traps in the doped layer were evaluated at low temperature by the threshold voltage shift and current collapse phenomena. GaInP/GaAs HEMT's show no current collapse and have almost zero threshold voltage shift compared to AlGaAs/GaAS and InGaAs/InGaAS where the corresponding values are 0.5 and 0.25 V, respectively. Keywords: Transistors; Microwave equipment. (R.H.)