Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN ThinFilms and the Subsequent Fabrication of Superlattice Structures Using AlN and InN

摘要

An ALE deposition system, as well as our initial results of the ALE growth ofGaN, are described. The deposition system was fabricated in-house. It is high vacuum capable and allows the introduction of up to 16 gases without mixing. The substrates travel under different zones, each of which allows the adsorption or decomposition of one gas species at a time. Continuous crystalline GaN films were grown on (0001) alpha-SiC and analyzed by Auger spectroscopy, scanning electron microscopy and electron diffraction. Research concerned with the heteroepitaxial deposition of cubic boron nitride (c-BN) using different substrates and deposition technologies has also been conducted. Films were deposited and analyzed using the techniques of reflection high energy electron diffraction (RHEED), x-ray photoelectron spectroscopy (XPS), low energy electron diffraction (LEED), x-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Fourier transform infrared spectroscopy (FT-IE).