Growth, Nitrogen Vacancy Reduction and Solid Solution Formation in Cubic GaN ThinFilms and the Subsequent Fabrication of Superlattice Structures Using AlN and InN

摘要

Undoped GaN films have been deposited by gas-source MBE having essentiallyintrinsic electrical character. Acceptor-type behavior has been achieved with Mg doping. The electrical properties of these latter films were resistivity = 0.5 omega (dot) cm, Hall mobility (holes = 10 cm2/V (dot) s and carrier concentration = 1 x 10(18) cm-3. Photo-assisted gas-source MBE growth of stoichiometric GaN has also been achieved using a 500 W Hg lamp. Illumination and Ga cell temperature altered the texture of the polycrystalline GaN in unusual ways, changing the growth habit from (0001) is parallel to (100) to (0001) is parallel to (111) and back again. Thin films of cubic-BN (c-BN) have also been deposited on various substrates via both gas-source MBE and electron beam MBE. The use of Si (100) substrates, the latter technique and the characterization tools of RHEED, XPS, LEED, SEM, FTIR and HRTEM resulted in the achievement of an initial amorphous BN layer followed by a layer of turbostratic BN and subsequently by a layer of cubic BN. Cubic BN films were also deposited on polycrystalline diamond films grown via CVD on Si(100). The effect of the bombarding species was examined. Finally, the plans for both a systematic investigation of the ion implantation and contact