Prevention of Single Event Upsets in Microelectronics.

摘要

Experimental and analytical studies of basic single-event radiation effects, single-event upset (SEU) modelling, and single-event upset hardening were performed. The effects of total-dose and proton environments on SEU responses are presented and quantified. Improved modelling and hardening techniques for SEU and GaAs and bipolar SRAMs are also presented. Techniques for SEU reduction in circuits, including a novel decoupling resistor structure, were evaluated.