Evaluation of the Feasibility and the Cost of HgCdTe Epitaxial Layers Grown by Molecular Beam Epitaxy on CdTe, CdZnTe and GaAs Substrates.

摘要

In this contract which has been awarded to EPIR Ltd. two tasks were assigned. The first one was related to the evaluation of the cost mercury cadmium tellurium epitaxial layers grown by Molecular Beam Epitaxy (MBE) on various substrates. The substrates which were supposed to be considered are Cadmium Telluride, CdZnTe and Gallium Arsenic. In addition, EPIR has also analyzed the cost on silicon substrates since Si is currently considered to be the most important substrates for IR photodiode technology. The second task was related to the feasibility of growing a few HgCdTe epilayers by MDE with at least one exhibiting standard specifications.