HgTe and CdTe epitaxial layers and HgTe–CdTe superlattices grown by laser molecular beam epitaxy

摘要

CdTe and HgTe epilayers and HgTe/CdTe superlattices have been grown by laser molecular beam epitaxy (laser MBE) on CdTe substrates. The power density of the laser radiation used to evaporate source materials was found to be a very important growth parameter. The superlattice structures have been characterized by helium ion backscattering spectrometry, x-ray double crystal diffractometry, and low temperature electrical transport measurements. Results indicate good crystallinity and very strong 2D carrier confinement at low temperatures. At 77 K, electron mobilities in excess of 50 000 cm^2/V s have been observed. Quantum Hall effect has been observed for the first time in this system.