Dual-Band Infrared Detectors Made on High-Quality HgCdTe Epilayers Grown by Molecular Beam Epitaxy on CdZnTe or CdTe/Ge Substrates

摘要

In this paper,we present all the successive steps for realizing dual-band infrared detectors operating in the mid-wavelength infrared (MWIR) band.High crystalline quality HgCdTe multilayer stacks have been grown by molecular beam epitaxy (MBE) on CdZnTe and CdTe/Ge substrates.Material characterization in the light of high-resolution x-ray diffraction (HRXRD) results and dislocation density measurements are exposed in detail.These characterizations show some striking differences between structures grown on the two kinds of substrates.Device processing and readout circuit for 128 X 128 focal-plane array (FPA) fabrication are described.The electro-optical characteristics of the devices show that devices grown on Ge match those grown on CdZnTe substrates in terms of responsivity,noise measurements,and operability.