首页> 外文期刊>Journal of Electronic Materials >CdZnTe Substrate Surface Preparation Technology at ASELSAN, Inc. for Molecular Beam Epitaxy Growth of High Quality HgCdTe Epilayers
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CdZnTe Substrate Surface Preparation Technology at ASELSAN, Inc. for Molecular Beam Epitaxy Growth of High Quality HgCdTe Epilayers

机译:Aselsan,Inc。的Cdznte衬底表面制备技术用于高质量HGCDTE脱落剂的分子束外延生长

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摘要

High quality CdZnTe substrates with 4% ZnTe mole fraction are used for epitaxial growth of HgCdTe infrared detector layers. Molecular Beam Epitaxy (MBE) growth of HgCdTe epilayers requires high quality surface layer with sub-nanometer surface roughness values as well. We report on the development of a CdZnTe substrate surface preparation process for MBE growth of high quality HgCdTe epilayers. Surface preparation processes were performed on both commercially available CdZnTe substrates and substrates obtained from in-house grown CdZnTe boules. We developed a multi-step substrate surface processing flow to achieve sub-nanometer surface roughness, low total thickness variation (TTV), and wax or slurry residue free CdZnTe substrate surfaces. Each process step was optimized with the aim of removing the subsurface damage caused by the previous process step; so that we reduce the amount of damaged layer needed to be etched prior to epitaxy. Our developed surface preparation process can be applicable to commercially available CdZnTe substrates with high surface roughness and high TTV. This process was also optimized for as-cut CdZnTe slices. We are capable of processing typically 25 mm x 25 mm CdZnTe substrates with achievable surface roughness values (R-rms) down to below 0.5 nm.
机译:具有4%ZnTe摩尔级分的高质量Cdznte基材用于HGCDTE红外探测器层外延生长。 HGCDTE脱落剂的分子束外延(MBE)生长需要具有亚纳米表面粗糙度值的高质量表面层。我们报告了MBE生长的Cdznte基材表面制备方法的开发,用于高质量的HGCDTE癫痫患者的生长。在商业上可获得的CDZNTE底物上进行表面制备方法和从内部种植的CDZNTE槽获得的基材。我们开发了一种多步基板表面处理流程,实现亚纳米表面粗糙度,低总厚度变化(TTV)和蜡或浆料残留物游离Cdznte衬底表面。每次处理步骤都经过优化,目的是去除由先前的过程步骤引起的地下损坏;因此,我们在外延之前减少所需的损坏层的量。我们开发的表面制备方法可适用于具有高表面粗糙度和高TTV的市售Cdznte基材。该过程还针对切割Cdznte切片进行了优化。我们能够处理通常将25mm×25mm的Cdznte基板加工,可实现的表面粗糙度值(R-rms)降至0.5nm以下。

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