SUBSTRATE FOR MOLECULAR BEAM EPITAXY (MBE) HGCDTE GROWTH

摘要

A semiconductor structure having a first semiconductor body having an upper surface with a non 211crystallographic orientation and a second semiconductor body having a surface with a 211crystallographic orientation, the surface of the second semiconductor body being bonded to a bottom surface of the first semiconductor body. A layer comprising CdTe is epitaxially disposed on the upper surface of the second semiconductor body. The second semiconductor body is CZ silicon, has a thickness less than 10 microns and has a diameter of at least eight inches. A getter having micro-cavities has a bottom surface formed on an upper surface of the first semiconductor body and has an upper surface bonded to a bottom surface of the second semiconductor body.