Molecular beam epitaxy (MBE) HgCdTe flexible growth technology for the manufacturing of infrared photovoltaic detectors

摘要

Abstract: In this paper we present p-on-n heterostructure HgCdTe photovoltaic device data that illustrates the high performance and flexibility in band gap control of the molecular beam epitaxy (MBE) technology. This flexibility demonstration was carried out by growing material for operation in the following cut-off wavelength ($lambda$-co$/) ranges of interest: LWIR $LB$lambda$-co$/(77 K) $EQ 9-11 $mu@m$RB@, MLWIR $LB$lambda$-co$/(77 K) $EQ 6-7 $mu@m$RB@, and VLWIR $LB$lambda$-co$/(40 K) $EQ 20 $mu@m$RB@. Detailed analyses of the current-voltage characteristics of these diodes as a function of temperature show that their dark currents are diffusion-limited down to 80 K, 50 K, and 30 K for the MLWIR, LWIR, and VLWIR photodiodes, respectively. In general, the R$-o$/A device values were uniform for the three band gap ranges when operating under diffusion limited conditions. The planar MBE HgCdTe technology has been further validated with the successful fabrication and operation of 64 $MUL 64 hybrid FPAs. !21