Characterization of HgCdTe epilayers grown on GaAs(211)B by molecular beam epitaxy

机译：通过分子束外延表征在GaAs（211）B上生长的HgCdTe外延层

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Abstract: The growth of HgCdTe(MCT) epilayers on GaAs(211)B substrate by molecular beam epitaxy (MBE) have been reported. The growth procedure of MCT is described. Various characterization techniques have been employed for evaluating the quality of MCT epilayers. A planar PV array are fabricated for assessment of MCT epilayer quality. The present results represent an important step toward the demonstration of MBE epilayers for fabrication of focal plane arrays.!2

机译：摘要：已经报道了分子束外延（MBE）在GaAs（211）B衬底上生长HgCdTe（MCT）外延层。描述了MCT的生长过程。已经采用了各种表征技术来评估MCT外延层的质量。制作了平面PV阵列以评估MCT外延层质量。目前的结果代表了朝着展示焦平面阵列制造MBE外延层迈出的重要一步。2

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《Detectors, Focal Plane Arrays, and Applications》|1996年|p.224-229|共6页
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Shida Chen; North China Research Institute of Electro-Optics; China; Xianzhong He; North China Research Institute of Electro-Optics; China; Li Lin; North China Research Institute of Electro-Optics; China.;
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中图分类物理学;
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1. Electron Microscopy of Surface-Crater Defects of HgCdTe/CdZnTe(211)B Epilayers Grown by Molecular-Beam Epitaxy [J] . T. Aoki, Y. Chang, G. Badano, Journal of Electronic Materials . 2003,第7期

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2. Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy [J] . X.J. WANG, C. FULK, F.H. ZHAO, Journal of Electronic Materials . 2008,第9期

机译：分子束外延生长的PbSnSe / CdTe / Si（211）外延层的表征
3. Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy [J] . X.J. Wang, C. Fulk, F.H. Zhao, Journal of Electronic Materials . 2008,第9期

机译：分子束外延生长的PbSnSe / CdTe / Si（211）外延层的表征
4. Characterization of HgCdTe epilayers grown on GaAs(211)B by molecular beam epitaxy [C] . Shida Chen, Xianzhong He, Li Lin Conference on detectors, focal plane arrays, and applications . 1996

机译：分子束外延在GaAs（211）B上生长的HGCDTE癫痫的特征
5. Electrical characterization of nonstoichiometric GaAs grown at low temperature by molecular beam epitaxy. [D] . Ibbetson, James Paul. 1997

机译：分子束外延在低温下生长的非化学计量砷化镓的电学表征。
6. Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy [O] . Xian Gao, Zhipeng Wei, Fenghuan Zhao, -1

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7. Reciprocal space mapping study of CdTe epilayer grown by molecular beam epitaxy on (2 1 1)B GaAs substrate [O] . Mustafa Polat, Ozan Arı, Orhan Öztürk, 2017

机译：分子束外延生长的CdTe脱落剂对（211）Ba GaAs衬底的互核空间映射研究
8. Evaluation of the Feasibility and the Cost of HgCdTe Epitaxial Layers Grown by Molecular Beam Epitaxy on CdTe, CdZnTe and GaAs Substrates. [R] . Faurie, J. P. 1991

机译：分子束外延生长HgCdTe外延层在CdTe，CdZnTe和Gaas衬底上的可行性和成本评估。

Characterization of HgCdTe epilayers grown on GaAs(211)B by molecular beam epitaxy

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