Development of 6H-SiC CMOS Transistors for Insertion into a 350 deg C Operational Amplifier.

摘要

Device parameter measurements have been made on n-channel MOSFET devices that were fabricated prior to this contract. These parameters were to be used to simulate circuits using Simulation Program with Integrated Circuit Emphasis (SPICE). The devices had I-V curves characteristic of normal MOSFETs. However, the gate leakage of these devices was too high to be allow meaningful data to be taken at very low drain biases. Therefore, the wafers currently in process must be finished, and must have sufficiently low gate leakage, before a significant modeling effort can be undertaken.